Semiconductor optical element
AssigneeMitsubishi Electric Corporation
InventorAyumi FUCHIDA
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Abstract
A semiconductor optical element has a mesa structure in which an active layer is embedded, and comprises a straight propagating section and a spot size converter section being such that a light confinement in the active layer is weaker than that of the straight propagating section, wherein in a same plane parallel to a layer surface of the active layer, an average value of a width of the mesa structure of the straight propagating section is smaller than a value of the width of the mesa structure at the emission facet of the spot size converter section, and at a top part of the mesa structure, an electrode is formed so that an electric current is injected in the active layer across the entire length of the straight propagating section and the spot size converter section.
Claims16
A semiconductor optical element having a mesa structure in which an active layer is embedded,
- wherein the semiconductor optical element comprises a straight propagating section in which a width of the active layer is uniform and
- a spot size converter section positioned further toward a light emission side than the straight propagating section and being such that a light confinement in the active layer is weaker than a light confinement in the straight propagating section and a spot size of a light at an emission facet is greater than a spot size of a light of the straight propagating section,
- wherein in a same plane parallel to a layer surface of the active layer, an average value of a width of the mesa structure of the straight propagating section is smaller than a value of the width of the mesa structure at the emission facet of the spot size converter section, and at a top part of the mesa structure, an electrode is formed so that an electric current is injected in the active layer across over whole length of the straight propagating section and the spot size converter section.
Dependencies are inferred from the claim text.