Semiconductor device with programmable unit and method for fabricating the same
AssigneeNanya Technology Corporation
InventorTe-Yin CHEN
Life of this patent
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first conductive layer positioned above the substrate, a bottom conductive layer positioned above the first conductive layer and electrically coupled to the first conductive layer, a programmable insulating layer positioned on the bottom conductive layer, a top conductive layer positioned on the programmable insulating layer, and a redistribution structure positioned above the first conductive layer and electrically coupled to the first conductive layer. The bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first conductive layer positioned above the substrate;
- a bottom conductive layer positioned above the first conductive layer and electrically coupled to the first conductive layer;
- a programmable insulating layer positioned on the bottom conductive layer;
- a top conductive layer positioned on the programmable insulating layer;
- and
- a redistribution structure positioned above the first conductive layer and electrically coupled to the first conductive layer;
- wherein the bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit.
A semiconductor device, comprising:
- a substrate;
- a first conductive layer positioned above the substrate;
- a second conductive layer positioned at a same vertical level as the first conductive layer;
- a bottom conductive layer positioned above the second conductive layer and electrically coupled to the second conductive layer;
- a programmable insulating layer positioned on the bottom conductive layer;
- a top conductive layer positioned on the programmable insulating layer;
- and
- a redistribution structure positioned above the first conductive layer and electrically coupled to the first conductive layer;
- wherein the bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit.
A semiconductor device, comprising:
- a substrate;
- a first conductive layer positioned above the substrate;
- a second conductive layer positioned at a same vertical level as the first conductive layer;
- a redistribution structure comprising a redistribution overlapping portion positioned on the first conductive layer, a redistribution contact portion positioned on the second conductive layer, and a redistribution connection portion connecting the redistribution overlapping portion and the redistribution connection portion;
- a programmable insulating layer positioned on the redistribution overlapping portion;
- and
- a top conductive layer positioned on the programmable insulating layer;
- wherein the redistribution overlapping portion, the programmable insulating layer, and the top conductive layer form a programmable unit.
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a first conductive layer above the substrate;
- concurrently forming a bottom conductive layer and a redistribution structure above the first conductive layer, wherein the bottom conductive layer and the redistribution structure are electrically coupled to the first conductive layer;
- forming a programmable insulating layer on the bottom conductive layer;
- and
- forming a top conductive layer on the programmable insulating layer;
- wherein the bottom conductive layer, the programmable insulating layer, and the top conductive layer form a programmable unit.
Dependencies are inferred from the claim text.