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US 2022/0166425 A1Published application
Load Switch Including Back-to-Back Connected Transistors
AssigneeNuVolta Technologies (Hefei) Co., Ltd.
InventorsJohn Lin, Jinbiao Huang
Life of this patent
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Abstract
An apparatus includes a first drain/source region and a second drain/source region over a substrate, and a first gate adjacent to the first drain/source region and a second gate adjacent to the second drain/source region, wherein the first gate and the second gate are separated from each other, wherein the first drain/source region, the second drain/source region, the first gate and the second gate form two back-to-back connected transistors.
Claims20
An apparatus comprising:
- a first drain/source region and a second drain/source region over a substrate;
- and
- a first gate adjacent to the first drain/source region and a second gate adjacent to the second drain/source region, wherein the first gate and the second gate are separated from each other, and wherein the first drain/source region, the second drain/source region, the first gate and the second gate form two back-to-back connected transistors.
A method comprising:
- growing an epitaxial layer with a first conductivity type on a substrate with the first conductivity type;
- forming a drift layer having a second conductivity type over the epitaxial layer;
- forming a first body region and a second body region with the first conductivity type in the drift layer;
- implanting ions with the second conductivity type to form a first source region in the first body region and a second source region in the second body region;
- and
- forming a first gate adjacent to the first source region and a second gate adjacent to the second source region, wherein the first source region and the second source region are on opposing sides of the first gate and the second gate.
3 more elements
A load switch comprising:
- a first transistor;
- and
- a second transistor being back-to-back connected to the first transistor, wherein:
- a source of the first transistor and a source of the second transistor are formed over a substrate;
- a gate of the first transistor is adjacent to the source of the first transistor;
- and
- a gate of the second transistor is adjacent to the source of the second transistor, and wherein the gate of the first transistor and the gate of the second transistor are separated from each other.
4 more elements
Dependencies are inferred from the claim text.