Heterogenous integration of complementary metal-oxide-semiconductor and mems sensors

A method for forming a device comprising:

• providing a CMOS substrate prepared with
• a complementary metal oxide semiconductor (CMOS) region with CMOS components,
• a BE dielectric with interconnections for interconnecting the CMOS components, and
• a CMOS substrate bonding layer on the BE dielectric;
• and
• providing a MEMS substrate prepared with
• at least an upper portion of a MEMS level with a MEMS module, and
• a MEMS substrate bonding layer on a top surface of the at least an upper portion of the MEMS level;
• bonding the CMOS substrate to the MEMS substrate by bonding the CMOS substrate bonding layer and the MEMS substrate bonding layer together to form an integrated substrate stack;
• removing the MEMS substrate from the integrated substrate stack, resulting in a CMOS integrated stack;
• and
• post integration processing of the CMOS integrated stack to complete the device which is a CMOS device integrated with the MEMS module.

A device comprising:

• a CMOS substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS components and a BE dielectric with interconnections for interconnecting the CMOS components;
• a bonded MEMS level disposed on a portion of the BE dielectric, wherein the bonded MEMS level comprises a MEMS region with a MEMS module, the MEMS module includes a MEMS structure comprising of polysilicon structures;
• a substrate sealing ring on the BE dielectric surrounding the bonded MEMS level;
• a cap having a cap inner surface and a cap outer surface, wherein the cap inner surface includes a cap sealing ring;
• and
• wherein the cap sealing ring of the cap is bonded to the substrate bonding ring on the BE dielectric to hermetically seal the MEMS level.