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AssigneeUniversity of Copenhagen
InventorsThomas Sand Jespersen, Jesper Nygård, Damon Carrad, Martin Bjergfelt
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The present disclosure further relates to nanostructures, in particular hybrid nanostructures with patterned growth of various layers for use in nanoscale electronic devices, such as hybrid semiconductor nanostructures with patterned growth and/or deposition of superconducting material for use in quantum devices. The presently disclosed method can be utilized for in-situ manufacturing of nanoscale electronic devices that have not been contaminated by ex-situ processes. One embodiment relates to a method for manufacturing a substrate for growth of crystalline nanostructures, the method comprising the steps of: depositing one or more layers of a crystal growth compatible dielectric material, such as silicon oxide, in a predefined pattern on the surface of a crystal growth compatible substrate to create a predefined etch pattern of said crystal growth compatible material, and selectively etching the substrate surface around said etch pattern to provide at least one under-etched platform which is vertically raised from the etched substrate surface.
A method for manufacturing a substrate for epitaxial growth of crystalline nanostructures, the method comprising the steps of:
The method according to any of the preceding claims, wherein the predefined pattern comprises layout for at least one source and/or at least one drain for at least one nanoscale device.
The method according to any of the preceding claims, wherein said at least one under-etched platform is provided in a material and a configuration which is transparent to light of wavelengths for optical lithography and/or electrons of energy for electron beam lithography, such as silicon oxide and/or silicon nitride at a thickness below 200 nm.
The method according to any of the preceding claims, comprising the step of defining a nanostructure pattern for defining a growth pattern for one or more planar crystalline nanostructures, wherein at least one of said nanostructure growth patterns is defined below at least one under-etched platform.
A method for provision of a nanoscale device, the method comprising the steps of
A nanoscale electrical device comprising one or more sources, one or more drains, one or more junctions comprising a semiconductor nanostructure for connecting at least one source and at least one drain, and one or more gates for gating at least one of said junctions, and wherein at least one of said junctions is formed by a semiconductor nanowire.
Dependencies are inferred from the claim text.