Methods and apparatus for zone control of rf bias for stress uniformity

An apparatus for adjusting film properties during deposition, comprising:

• a pedestal configured to support a substrate during processing in a PVD chamber and configured to be positioned below a processing volume of the PVD chamber;
• a first electrode with a disk shape that is positioned in a central area of the pedestal proximate an uppermost surface of the pedestal, wherein the first electrode is configured to accept a first RF bias voltage adjustment from a substrate stress profile tuner;
• a second electrode with a first annular shape that surrounds the first electrode proximate an uppermost surface of the pedestal and is electrically isolated from the first electrode, wherein the second electrode is configured to accept a second RF bias voltage adjustment from the substrate stress profile tuner;
• and
• a third electrode with a second annular shape that surrounds the second electrode proximate an uppermost surface of the pedestal and is electrically isolated from the second electrode, wherein the third electrode is configured to accept a third RF bias voltage adjustment from the substrate stress profile tuner.