Doped fused silica component for use in a plasma-assisted manufacturing process and method for producing the component

Abstract

Doped quartz glass components for use in a plasma-assisted manufacturing process contain at least one dopant which is capable of reacting with fluorine to form a fluoride compound, and the fluoride compound has a boiling point higher than that of SiF4. The doped quartz glass component has high dry-etch resistance and low particle formation, and has uniform etch removal when used in a plasma-assisted manufacturing process. The doped quartz glass has a microhomogeneity defined by (a) a surface roughness with an Ra value of less than 20 nm after the surface has been subjected to a dry-etching procedure as specified in the description, or (b) a dopant distribution with a lateral concentration profile in which maxima of the dopant concentration are at an average distance apart of less than 30 μm.

Dependencies are inferred from the claim text.