Fet based sensory systems

A sensor comprising:

• one or more transistors;
• and
• one or more sensing elements, wherein
• an edge behaves as moving gate of said one or more transistors,
• an electric field is applied to said edge,
• said one or more transistors is/are biased,
• said one or more sensing elements is/are flexible,
• source and drain wells of said one or more transistors can be coplanar or stacked,
• said edge can move in a lateral or a parallel direction with respect to a transistor current,
• said edge can move in a vertical or a perpendicular direction with respect to said transistor current,
• the magnitude of the change in said drain current determines the sensitivity, and
• one or more cantilevers, wherein
• said one or more sensing elements is/are one or more proof masses,
• said one or more proof masses is/are coupled to said one or more cantilevers,
• said one or more proof masses coupled to the said one or more cantilevers displaces with two or more degrees of freedom,
• said one or more proof masses resonates in one direction and displaces in another direction due to a Coriolis force,
• said one or more proof masses displacement modulates a drain current in said one or more transistors, and
• the displacement of said one or more proof masses can be measured in the direction of the resonance and Coriolis force displacement.

A sensor comprising:

• one or more transistors;
• and
• one or more sensing elements, wherein
• an edge behaves as moving gate of said one or more transistors,
• an electric field is applied to said edge,
• said one or more transistors is/are biased,
• said one or more sensing elements is/are flexible,
• source and drain wells of said one or more transistors can be coplanar or stacked,
• said edge can move in a lateral or a parallel direction with respect to a transistor current,
• said edge can move in a vertical or a perpendicular direction with respect to said transistor current,
• the magnitude of the change in said drain current determines the sensitivity, and
• one or more cantilevers, wherein
• said one or more sensing elements is/are one or more proof masses,
• said one or more proof masses is/are coupled to said one or more cantilevers,
• said one or more proof masses coupled to the said one or more cantilevers displaces with two or more degrees of freedom,
• said one or more proof masses resonates in one direction and displaces in another direction due to a Coriolis force,
• said one or more proof masses displacement modulates a drain current in said one or more transistors,
• the displacement of said one or more proof masses can be measured in the direction of the resonance and Coriolis force displacement, and
• the magnitude of the change in said drain current determines the sensitivity of the displacement of said one or more proof masses.