Sic material and method for manufacturing same
AssigneeTokai Carbon Korea Co., Ltd
InventorSang Chul LEE
Life of this patent
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Abstract
Described herein are an SiC material and a method for manufacturing same. The SiC material includes an SiC layer having a low thermal conductivity region formed in at least a portion thereof, wherein the low thermal conductivity region has an average crystal grain size of 3.5 μm or less and (111) plane preferential growth according to X-ray diffraction analysis.
Claims19
A SiC material comprising a SiC layer including a low thermal conductivity region which has an average crystal grain size of 3.5 μm or less, and is a (111) plane preferential growth in X-ray diffraction analysis,
- wherein the low thermal conductivity region has a diffraction intensity ratio (I) of the X-ray diffraction analysis calculated according to Equation 1 below of 0.5 or less;
- Diffraction
-
-
- intensity
-
-
- ratio
-
-
- (
- I
- )
- =
- (
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 200
- )
-
-
- plane
- +
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 220
- )
-
-
- plane
- +
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 311
- )
-
-
- plane
- )
- /
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 111
- )
-
-
- plane
- .
- [
- Equation
-
-
- 1
- ]
(canceled)
An SiC material comprising an SiC layer which has an average crystal grain size of 3.5 μm or less, and is a (111) plane preferential growth in X-ray diffraction analysis,
- wherein the SiC layer has a diffraction intensity ratio (I) of the X-ray diffraction analysis calculated according to Equation 1 below of 0.5 or less;
- Diffraction
-
-
- intensity
-
-
- ratio
-
-
- (
- I
- )
- =
- (
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 200
- )
-
-
- plane
- +
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 220
- )
-
-
- plane
- +
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 311
- )
-
-
- plane
- )
- /
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 111
- )
-
-
- plane
- .
- [
- Equation
-
-
- 1
- ]
(canceled)
A method for manufacturing a SiC material, the method comprising steps of:
- preparing a substrate;
- and
- forming a SiC layer on the substrate using a CVD method, wherein the SiC layer has a low thermal conductivity region formed in at least a portion thereof, the low thermal conductivity region which has an average crystal grain size of 3.5 μm or less, and is a (111) plane preferential growth in X-ray diffraction analysis,
- wherein the SiC layer has a diffraction intensity ratio (I) of the X-ray diffraction analysis calculated according to Equation 1 below of 0.5 or less;
- Diffraction
-
-
- intensity
-
-
- ratio
-
-
- (
- I
- )
- =
- (
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 200
- )
-
-
- plane
- +
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 220
- )
-
-
- plane
- +
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 311
- )
-
-
- plane
- )
- /
- peak
-
-
- intensity
-
-
- of
-
-
- (
- 111
- )
-
-
- plane
- .
- [
- Equation
-
-
- 1
- ]
Dependencies are inferred from the claim text.