Semiconductor device including resistance changing layer and method of manufacturing the same
AssigneeSK hynix Inc.
InventorJae Hyun HAN
Life of this patent
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Abstract
A semiconductor device includes a substrate and a gate structure disposed over the substrate. The gate structure includes at least one gate electrode layer and at least one interlayer insulating layer that are alternately stacked over the substrate. The semiconductor device includes a hole pattern penetrating the gate structure over the substrate, and a gate insulating layer, a channel layer, a resistor layer, and a resistance changing layer sequentially disposed on a sidewall surface of the gate structure within the hole pattern. Each of the resistor layer and the resistance changing layer is disposed opposite to the gate insulating layer, based on the channel layer.
Claims20
A semiconductor device comprising;
- a substrate;
- a gate structure disposed over the substrate, the gate structure including at least one gate electrode layer and at least one interlayer insulating layer that are alternately stacked over the substrate;
- a hole pattern penetrating the gate structure over the substrate;
- and
- a gate insulating layer, a channel layer, a resistor layer, and a resistance changing layer that are sequentially disposed on a sidewall surface of the gate structure within the hole pattern,
- wherein each of the resistor layer and the resistance changing layer is disposed opposite to the gate insulating layer, based on the channel layer.
A semiconductor device comprising;
- a substrate;
- a gate structure disposed over the substrate, the gate structure including at least one gate electrode layer and at least one interlayer insulating layer that are alternately stacked over the substrate along a first direction perpendicular to the substrate and extending in a second direction perpendicular to the first direction;
- and
- a gate insulating layer, a channel layer, a resistor layer, and a resistance changing layer sequentially disposed on a sidewall surface of the gate structure over the substrate,
- wherein each of the resistor layer and the resistance changing layer is disposed opposite to the gate insulating layer, based on the channel layer.
Dependencies are inferred from the claim text.