Technologies for tuning superconducting josephson junctions
AssigneeThe University of Chicago
InventorsDavid SCHUSTER, Andrew ORIANI, Larry CHEN
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Abstract
Technologies for tuning a resistance of tunnel junctions such as Josephson junctions are disclosed. In the illustrative embodiment, a Josephson junction is heated to 85 Celsius, and an electric field is applied to the Josephson junction. The heat and the electric field cause the resistance of the Josephson junction to increase. Monitoring the Josephson junction during the application of the electric field allows for the resistance of the Josephson junction to be adjusted to a particular value.
Claims20
A method for tuning a resistance of a metal-metal oxide-metal junction, the method comprising:
- heating the metal-metal oxide-metal junction to a temperature of at least 60° Celsius;
- applying an electric field across the heated metal-metal oxide-metal junction,
- wherein applying the electric field across the heated metal-metal oxide-metal junction causes the resistance of the metal-metal oxide-metal junction to increase by at least 1%.
A method for tuning a resistance of a tunnel junction, the method comprising:
- heating the tunnel junction to a temperature of at least 60° Celsius;
- applying an electric field across the heated tunnel junction;
- measuring a change in resistance of the tunnel junction caused by application of the electric field to the heated tunnel junction;
- and
- controlling at least one of the electric field applied across the heated tunnel junction or the temperature of the tunnel junction based on the measured change in resistance of the tunnel junction.
A compute device for tuning a resistance of a metal-metal oxide-metal junction, the compute device comprising:
- heat controller circuitry configured to output a signal to a heat source to heat the metal-metal oxide-metal junction to a temperature of at least 60° Celsius;
- electric field controller circuitry configured to output a signal to an electric field generator to apply an electric field across the heated metal-metal oxide-metal junction;
- and
- resistance monitor circuitry configured to monitor a change in resistance of the metal-metal oxide-metal junction caused by application of the electric field.
Dependencies are inferred from the claim text.