Ion implanter, ion implantation method, and semiconductor device manufacturing method
AssigneeSumitomo Heavy Industries, Ltd.
InventorSayumi Hirose
Life of this patent
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Abstract
An ion implanter includes a crucible provided inside a vacuum chamber, and including an internal space configured to accommodate a solid sample which is a raw material of a source gas, a laser source provided outside the vacuum chamber, and irradiating the crucible with a laser beam, an arc chamber including an internal space for converting the source gas into plasma to generate ions, and in which an ion beam is extracted from the internal space, and a nozzle connecting the internal space of the crucible and the internal space of the arc chamber, and introducing the source gas vaporized in the internal space of the crucible into the internal space of the arc chamber.
Claims10
An ion implanter comprising:
- a crucible provided inside a vacuum chamber, and including an internal space configured to accommodate a solid sample which is a raw material of a source gas;
- a laser source provided outside the vacuum chamber, and irradiating the crucible with a laser beam;
- an arc chamber including an internal space for converting the source gas into plasma to generate ions, and in which an ion beam is extracted from the internal space;
- and
- a nozzle connecting the internal space of the crucible and the internal space of the arc chamber, and introducing the source gas vaporized in the internal space of the crucible into the internal space of the arc chamber.
An ion implantation method comprising:
- introducing a solid sample containing at least one of aluminum, indium, antimonide, tin, and magnesium into an internal space of a crucible;
- introducing the crucible into which the solid sample is introduced into a vacuum environment;
- heating the crucible to a temperature of 100° C. or higher and 3,000° C. or lower by irradiating an outside of the crucible with a laser beam having an output selected from a range of 0.1 kW or higher and 10 kW or lower, and having a wavelength range selected from a range of 200 nm or larger and 2,000 nm or smaller;
- generating a source gas by vaporizing the solid sample in the internal space of the crucible;
- introducing the source gas into an internal space of an arc chamber;
- generating ions by converting the source gas into plasma in the internal space of the arc chamber;
- extracting an ion beam from the internal space of the arc chamber;
- and
- irradiating a semiconductor wafer with the ion beam.
A semiconductor device manufacturing method, comprising:
- introducing a solid sample containing at least one of aluminum, indium, antimonide, tin, and magnesium into an internal space of a crucible;
- introducing the crucible into which the solid sample is introduced into a vacuum environment;
- heating the crucible to a temperature of 100° C. or higher and 3,000° C. or lower by irradiating an outside of the crucible with a laser beam having an output selected from a range of 0.1 kW or higher and 10 kW or lower, and having a wavelength range selected from a range of 200 nm or larger and 2,000 nm or smaller;
- generating a source gas by vaporizing the solid sample in the internal space of the crucible;
- introducing the source gas into an internal space of an arc chamber;
- generating ions by converting the source gas into plasma in the internal space of the arc chamber;
- extracting an ion beam from the internal space of the arc chamber;
- and
- irradiating a semiconductor wafer with the ion beam.
Dependencies are inferred from the claim text.