MONOLAYER GRAPHENE ON NON-POLAR FACE SiC SUBSTRATE AND CONTROL METHOD THEREOF
AssigneeTianjin University
InventorsLei MA, Walter Alexander DE HEER, Peixuan JI, Kaimin ZHANG, Jian ZHAO, Mei ZHAO
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Abstract
The present invention provides a control method to epitaxial growth monolayer graphene, in which a monolayer graphene is epitaxially grown on a non-polar crystal face at arbitrary angle of a non-polar crystal face SiC substrate, thereby utilizing the non-polar crystal face to manipulate the electrical transport properties of graphene. A monolayer graphene having ballistic transport properties can be epitaxially grown at arbitrary angle of non-polar crystal face SiC substrate by the above-mentioned control method.
Claims30
A control method to epitaxial growth monolayer graphene, wherein a monolayer graphene is epitaxially grown on a non-polar crystal face at arbitrary angle of a non-polar crystal face SiC substrate, thereby utilizing the physical properties of the non-polar crystal face and the interaction between the non-polar crystal face and graphene to manipulate the electrical transport properties of graphene;
- wherein, the non-polar crystal face SiC substrate is prepared by the following steps:
- adjusting an angle of a diamond wire relative to a SiC crystal column according to an included angle between a non-polar crystal face and a (0001) plane or a (000-1) plane, using the diamond wire to cut the SiC crystal column to obtain a SiC wafer, the diamond wire has a diameter of 0.2 to 0.8 mm, and is fed at a speed of 1.5 mm/min to 5 mm/min;
- performing grinding, mechanical polishing, and chemical-mechanical polishing to obtain a non-polar crystal face with atomic flatness;
- wherein, the grinding is performed under the following conditions:
- a grinding disc or a piece of abrasive paper containing diamond particles having a particle size of 3 to 60 μm is used, where the grinding pressure is 20 to 250 N, and the speed of the power head and the rotating speed of the grinding disc are 30 to 80 r/min and 100 to 300 r/min, respectively;
- the mechanical polishing is performed under the following conditions:
- a diamond suspension with a diamond particle size of 0.05 to 9 μm is adopted, where the polishing pressure is 20 to 80 N, the polishing disc is made of synthetic filament cloth, the speed of the power head is 30 to 100 r/min, and the rotating speed of the polishing disc is 60 to 320 r/min;
- the chemical-mechanical polishing is performed under the following conditions:
- an alkaline colloidal silica suspension is adopted, preferably with a pH value of 9 to 12, where the polishing pressure is 20 to 80 N, the dropping rate of the polishing solution is 5 to 50 mL/min, a polishing pad of fluff structure is adopted, the speed of the power head is 30 to 100 r/min, and the rotating speed of the polishing disc is 60 to 320 r/min;
- cutting the SiC wafer to obtain the non-polar crystal face SiC substrate;
- wherein the SiC wafer is cut into a small wafer having a length of 3 to 8 mm and a width of 4 to 10 mm as the non-polar crystal face SiC substrate.
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A method for preparing a non-polar crystal face SiC substrate, includes the following steps:
- adjusting an angle of a diamond wire relative to a SiC crystal column according to an included angle between a non-polar crystal face and a (0001) plane or a (000-1) plane, using the diamond wire to cut the SiC crystal column to obtain a SiC wafer;
- wherein the diamond wire has a diameter of 0.2 to 0.8 mm, and is fed at a speed of 1.5 mm/min to 5 mm/min;
- performing grinding, mechanical polishing, and chemical-mechanical polishing to obtain a non-polar crystal face with atomic flatness;
- wherein, the grinding is performed under the following conditions:
- a grinding disc or a piece of abrasive paper containing diamond particles having a particle size of 3 to 60 μm is used, where the grinding pressure is 20 to 250 N, and the speed of the power head and the rotating speed of the grinding disc are 30 to 80 r/min and 100 to 300 r/min, respectively;
- the mechanical polishing is performed under the following conditions:
- a diamond suspension with a diamond particle size of 0.05 to 9 μm is adopted, where the polishing pressure is 20 to 80 N, the polishing disc is made of synthetic filament cloth, the speed of the power head is 30 to 100 r/min, and the rotating speed of the polishing disc is 60 to 320 r/min;
- the chemical-mechanical polishing is performed under the following conditions:
- an alkaline colloidal silica suspension is adopted, preferably with a pH value of 9 to 12, where the polishing pressure is 20 to 80 N, the dropping rate of the polishing solution is 5 to 50 mL/min, a polishing pad of fluff structure is adopted, the speed of the power head is 30 to 100 r/min, and the rotating speed of the polishing disc is 60 to 320 r/min;
- cutting the SiC wafer to obtain the non-polar crystal face SiC substrate;
- wherein the SiC wafer is cut into a small wafer having a length of 3 to 8 mm and a width of 4 to 10 mm as the non-polar crystal face SiC substrate.
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Dependencies are inferred from the claim text.