Ion beam delayering system and method, and endpoint monitoring system and method therefor
AssigneeTechinsights Inc.
InventorChristopher PAWLOWICZ
Life of this patent
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AssigneeTechinsights Inc.
InventorChristopher PAWLOWICZ
Estimating the term…
Described are various embodiments of an ion beam delayering system and method, and endpoint monitoring system and method. One embodiment includes a method for monitoring an ion beam de-layering process for an unknown heterogeneously layered sample, the method comprising: grounding the sample to allow an electrical current to flow from the sample, at least in part, as a result of the ion beam de-layering process; milling a currently exposed layer of the sample using the ion beam, resulting in a given measurable electrical current to flow from the sample as said currently exposed layer is milled, wherein said given measurable electrical current is indicative of an exposed surface material composition of said currently exposed layer; detecting a measurable change in said measureable electrical current during said milling as representative of a corresponding exposed surface material composition change; and associating said measurable change with a newly exposed layer of the sample.
A method for monitoring an ion beam de-layering process for an unknown heterogeneously layered sample, the method comprising:
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A system for monitoring an ion beam de-layering process for an unknown heterogeneously layered sample, the system comprising:
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An ion beam de-layering system for de-layering an unknown heterogeneously layered sample, the system comprising:
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A non-transitory computer-readable medium for monitoring ion beam de-layering of an unknown heterogeneously layered sample and having computer-executable instructions stored thereon to:
Dependencies are inferred from the claim text.