Quantum Dot Microscope Apparatus
AssigneesBoard of Trustees of Michigan State University, Wisconsin Alumni Research Foundation
InventorsStuart Holden TESSMER, Eric William GOODWIN, Oleksandr LEVCHENKO
Life of this patent
Estimating the term…
Abstract
A quantum dot microscope apparatus is provided. A further aspect employs a tilted or tapered end or tip on a microscopic probe. Another aspect of the present apparatus employs a probe including a quantum dot with only one tunneling lead connected to a power source. A manufacturing aspect includes creating a tapered or asymmetrically shaped specimen-facing end of a probe where a quantum dot is located on the end. A further manufacturing aspect includes using focused ion-beam milling to create a tip or end of a quantum dot microscope probe.
Claims23
A microscope apparatus comprising a probe which further comprises:
- an insulating substrate having a centerline;
- a quantum dot located on an end of the substrate;
- a first electrical lead located on a side portion of the substrate;
- at least a second electrical lead located on another side portion of the substrate, the electrical leads being spaced apart from each other on the substrate;
- and
- a tunneling junction located between and adjacent to the first electrical lead and a first area of the quantum dot;
- the quantum dot being offset angled from a plane perpendicular to the centerline with the first area of the quantum dot:
- being more recessed than a second area of the quantum dot which intersects the centerline, and being more recessed than a third area of the quantum dot which is closest to the second electrical lead.
A microscope apparatus comprising a probe which further comprises:
- an elongated glass fiber;
- a nanoscale semiconductor located on a tip of the fiber;
- a metallic, tunneling electrical lead located on the fiber and being connected to a power source;
- a metallic, capacitive electrical lead located on the fiber and being peripherally spaced apart from the tunneling electrical lead;
- and
- a tunneling junction located between the first electrical lead and a first area of the nanoscale semiconductor, the tunneling junction being metallic oxide;
- a capacitive junction located between the nanoscale semiconductor and the capacitive electrical lead, the capacitive junction being metallic oxide and less conductive than the tunneling junction;
- the capacitive junction being longer than the tunneling junction;
- and
- the tunneling junction being recessed more than the capacitive junction.
A method of manufacturing a probe, the method comprising:
- (a) etching a substantially conical end on an elongated glass fiber;
- (b) creating a tapered surface on the etched end of the fiber with a focused ion-beam;
- (c) creating metallic leads on a remaining frusto-conical sidewall of the fiber;
- and
- (d) creating a metallic quantum dot on the tapered surface of the fiber.
Dependencies are inferred from the claim text.