# US 2022/0118551 A1 · Method for producing three-dimensional silicon carbide-containing objects > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0118551 A1 - Document ID: US20220118551A1 - Status: Published application - Kind: A1 - Application number: 17/288,768 - Filed: 2019-11-05 - Published: 2022-04-21 - Earliest claimed: 2018-11-13 - Assignees: PSC Technologies, Inc. - Applicants: PSC Technologies GmbH - Inventors: Siegmund GREULICH-WEBER - Web page: https://patentgrep.com/patent/US20220118551A1 ## CPC - B23K 26/144: the fluid stream containing particles, e.g. powder - C23C 24/04: Impact or kinetic deposition of particles - B22F 10/16: by embedding the binder within the powder bed - B23K 26/0006: {taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence)} - B23K 26/123: {in an atmosphere of particular gases} - B23K 26/1462: {Nozzles; Features related to nozzles} - B23K 26/147: {Features outside the nozzle for feeding the fluid stream towards the workpiece} - B23K 26/1476: {Features inside the nozzle for feeding the fluid stream through the nozzle} - B23K 26/34: Laser welding for purposes other than joining - B23K 26/342: Build-up welding - B29C 64/141: using only solid materials - B33Y 10/00: Processes of additive manufacturing - B33Y 30/00: Apparatus for additive manufacturing; Details thereof or accessories therefor - B33Y 70/00: Materials specially adapted for additive manufacturing - B33Y 80/00: Products made by additive manufacturing - C04B 35/565: based on silicon carbide - C23C 16/047: {using irradiation by energy or particles} - C23C 16/325: {Silicon carbide} - C23C 16/483: {using coherent light, UV to IR, e.g. lasers} - C23C 24/082: {without intermediate formation of a liquid in the layer} - B22F 2302/105: Silicium carbide (SiC) - B23K 2103/52: {Ceramics} - B29C 64/209: Heads; Nozzles - C04B 2235/6026: Computer aided shaping, e.g. rapid prototyping - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER - B29C: SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING (making preforms B29B11/00; making laminated products by combining previously unconnected layers which become one product whose layers will remain together B32B37/00 - B32B41/00) - B33Y: ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING - C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE ## Abstract Subject-matter of the invention is a method of applying silicon carbide-containing materials to a substrate surface, and an apparatus for carrying out the method. ## Claims ### Claim 1 A method of applying silicon carbide-containing materials to a substrate surface, wherein a gaseous, liquid or powdery precursor material containing a silicon source and a carbon source is gasified and/or decomposed by the action of energy and at least a part of the decomposition products are deposited site-selectively on the substrate surface as a silicon carbide-containing material. ### Claim 2 (depends on 1) The method according to claim 1, wherein the silicon carbide-containing material is selected from optionally doped silicon carbide, optionally doped non-stoichiometric silicon carbide, silicon carbide alloys and mixtures thereof. ### Claim 3 (depends on 1) The method according to claim 1, wherein the silicon carbide-containing material is deposited as a layer on the substrate surface. ### Claim 4 (depends on 1) The method according to claim 1, wherein the silicon carbide-containing material is deposited on the substrate with a layer thickness in the range of 0.01 to 5 mm, 0.05 to 2 mm, or 0.1 to 1 mm. ### Claim 5 (depends on 1) The method according to claim 1, wherein: the powdery precursor material is moved in the form of at least one particle beam in the direction of the substrate surface, and is gasified and decomposed by the action of laser radiation before or on impacting the substrate, or the gaseous decomposition products are moved in the direction of the substrate, in the form of at least one particle beam. ### Claim 6 (depends on 5) The method according to claim 5, wherein the powdery precursor material or the gaseous decomposition products is or are moved toward the substrate by means of at least one nozzle. ### Claim 7 (depends on 5) The method according to claim 5, wherein: the powdery precursor material is moved in the direction of the substrate in the form of a powder beam, or the liquid precursor material is moved in atomized form or as a liquid beam in the direction of the substrate, or the gaseous precursor material or the gaseous decomposition products are moved in the direction of the substrate in the form of a gas beam. ### Claim 8 (depends on 1) The method according to claim 1, wherein the method is used for building up a three-dimensional silicon carbide-containing object layer by layer and/or for joining at least two components. ### Claim 9 (depends on 1) The method according to claim 1, wherein the method is laser deposition welding. ### Claim 10 (depends on 9) The method according to claim 9, wherein the powdery precursor material is gasified and decomposed by laser radiation in immediate proximity to the substrate surface. ### Claim 11 (depends on 1) The method according to claim 1, wherein the gasification and decomposition of the precursor material and the deposition of the silicon carbide-containing material is carried out in a protective gas atmosphere. ### Claim 12 (depends on 5) The method according to claim 5, wherein the particle beam or the particle beams is or are surrounded by a stream of protective gas. ### Claim 13 (depends on 1) A silicon carbide-containing object produced by the method of claim 1. ### Claim 14 An apparatus for the site-selective deposition of silicon carbide-containing materials on a substrate surface, wherein: the apparatus comprises (c) at least one device for decomposing gaseous precursor materials or for gasifying and decomposing liquid or powdery precursor materials, wherein the precursor materials comprise at least one carbon source and at least one silicon source, and (d) at least one device for generating at least one particle beam and/or for directing a particle beam onto the substrate surface. ### Claim 15 (depends on 14) The apparatus according to claim 14, wherein the device for generating a particle beam and/or for directing a particle beam onto the substrate surface is a nozzle selected from a solid-matter nozzle and a powder nozzle. ### Claim 16 (depends on 14) The apparatus according to claim 14, wherein the device for decomposing gaseous precursor materials or for gasifying and decomposing liquid or powdery precursor materials comprises means for generating high temperatures, laser radiation or an electric arc. ### Claim 17 (depends on 16) The apparatus according to claim 16, wherein the device for decomposing gaseous precursor materials or for gasifying and decomposing liquid or powdery precursor materials comprises means for generating laser radiation. ### Claim 18 (depends on 14) The apparatus according to claim 14, wherein the apparatus comprises means for generating a protective gas atmosphere.