Remote-plasma clean (rpc) directional-flow device

An apparatus for use in semiconductor processing, the apparatus comprising:

• a remote-plasma directional-flow device that is configured to be coupled between a remote-plasma reactor and a multi-station process chamber having a plurality of processing stations, the remote-plasma directional-flow device comprising:
• a plurality of ramped gas-diversion areas, respective ones of the plurality of ramped gas-diversion areas configured to direct at least radical species generated by the remote-plasma reactor to a separate one of the plurality of processing stations within the multi-station process chamber, a number of the plurality of ramped gas-diversion areas being equal to or greater than a number of the plurality of processing stations;
• and
• an incoming gas diversion hub configured to receive at least the radical species from the remote-plasma reactor and distribute at least the radical species substantially-uniformly to each of the plurality of ramped gas-diversion areas.

A remote-plasma clean (RPC) directional-flow device, comprising:

• a plurality of ramped gas-diversion areas, respective ones of the plurality of ramped gas-diversion areas being configured to direct at least radical species generated by an RPC reactor to a separate one of a plurality of processing stations within a multi-station process chamber;
• a multi-ribbed wall separating each of the ramped gas-diversion areas;
• and
• an incoming cleaning-gas diversion hub configured to receive at least the radical species from the RPC reactor and distribute at least the radical species substantially-uniformly to each of the plurality of ramped gas-diversion areas.

An apparatus for use in semiconductor processing, the apparatus comprising:

• a gas directional-flow device comprising:
• a gas diversion hub having a curved top surface;
• and
• a plurality of ramped gas diversion areas intersecting the curved top surface and symmetrically arranged about the gas diversion hub, wherein each of the plurality of ramped gas diversion areas comprises a first section connected to the curved top surface and a second section connected to the first section, wherein the first section is sloped downwards in a first profile from the curved top surface towards an outer periphery of the gas directional-flow device, wherein the second section is sloped downwards in a second profile different than the first profile, wherein the first profile is a non-linear profile.