Methods of manufacturing bulk acoustic wave resonators with patterned mass loading layers
AssigneeSkyworks Global Pte. Ltd.
InventorsKwang Jae Shin, Jiansong Liu, Jong Duk Han, Jae Hyung Lee, Yiliu Wang, Yosuke Hamaoka, Alexandre Augusto Shirakawa, Benfeng Zhang
Life of this patent
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Abstract
Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave resonators. During a common processing step, a first patterned mass loading layer for a first bulk acoustic wave resonator is formed and a second patterned mass loading layer for a second bulk acoustic wave resonator is formed. The first patterned mass loading layer has a different density than the second patterned mass loading layer.
Claims20
A method of manufacturing bulk acoustic wave resonators, the method comprising:
- providing a bulk acoustic wave resonator structure including a support substrate;
- and
- during a common processing step, forming (i) a first patterned mass loading layer on the bulk acoustic wave resonator structure in a first area for a first bulk acoustic wave resonator and (ii) a second patterned mass loading layer on the bulk acoustic wave resonator structure in a second area for a second bulk acoustic wave resonator, the second patterned mass loading layer having a different density than the first patterned mass loading layer.
A method of manufacturing bulk acoustic wave resonators, the method comprising:
- providing a bulk acoustic wave resonator structure including a support substrate;
- and
- during a common processing step, depositing material to form (i) a first patterned mass loading layer over the bulk acoustic wave resonator structure in a first area for a first bulk acoustic wave resonator and (ii) a second patterned mass loading layer over the bulk acoustic wave resonator structure in a second area for a second bulk acoustic wave resonator, the second patterned mass loading layer having a different density than the first patterned mass loading layer.
A method of manufacturing bulk acoustic wave resonators, the method comprising:
- providing a bulk acoustic wave resonator structure including a support substrate;
- and
- during a common processing step, etching material to form (i) a first patterned mass loading layer on the bulk acoustic wave resonator structure in a first area for a first bulk acoustic wave resonator and (ii) a second patterned mass loading layer on the bulk acoustic wave resonator structure in a second area for a second bulk acoustic wave resonator, the second patterned mass loading layer having a different density than the first patterned mass loading layer.
Dependencies are inferred from the claim text.