Lithium niobate or lithium tantalate fbar structure and fabricating method thereof
AssigneeNewsonic Technologies
InventorJian WANG
Life of this patent
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Abstract
A method for fabricating a film bulk acoustic resonator (FBAR) structure includes: obtaining a wafer, at least a portion of the wafer is made of a piezoelectric material; forming a bottom electrode layer on the wafer; patterning the bottom electrode layer to form a bottom electrode; forming a sacrificial island on the bottom electrode; bonding a bottom cap wafer onto the bottom electrode; processing the wafer to form a piezoelectric layer; forming a top electrode layer on the piezoelectric layer; patterning the top electrode layer to form a top electrode; and removing the sacrificial island to form a cavity.
Claims20
A method for fabricating a film bulk acoustic resonator (FBAR) structure, comprising:
- obtaining a wafer, at least a portion of the wafer is made of a piezoelectric material;
- forming a bottom electrode layer on the wafer;
- patterning the bottom electrode layer to form a bottom electrode;
- forming a sacrificial island on the bottom electrode;
- bonding a bottom cap wafer onto the bottom electrode;
- processing the wafer to form a piezoelectric layer;
- forming a top electrode layer on the piezoelectric layer;
- patterning the top electrode layer to form a top electrode;
- and
- removing the sacrificial island to form a cavity.
Dependencies are inferred from the claim text.