Film bulk acoustic resonator structure and fabricating method
AssigneeNewsonic Technologies
InventorJian WANG
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Abstract
A method for fabricating a film bulk acoustic resonator (FBAR) structure includes: sequentially forming a top electrode material layer, a piezoelectric layer, and a bottom electrode material layer on a substrate; patterning the bottom electrode material layer to form a bottom electrode; forming a sacrificial layer above the bottom electrode; bonding a bottom cap wafer onto the sacrificial layer; removing the substrate; patterning the top electrode material layer to form a top electrode; and removing a portion of the sacrificial layer to form a lower cavity.
Claims20
A method for fabricating a film bulk acoustic resonator (FBAR) structure, comprising:
- sequentially forming a top electrode material layer, a piezoelectric layer, and a bottom electrode material layer on a substrate;
- patterning the bottom electrode material layer to form a bottom electrode;
- forming a sacrificial layer above the bottom electrode;
- bonding a bottom cap wafer onto the sacrificial layer;
- removing the substrate;
- patterning the top electrode material layer to form a top electrode;
- and
- removing a portion of the sacrificial layer to form a lower cavity.
Dependencies are inferred from the claim text.