Method of making laser diode with highly reflective layer
AssigneeInstitute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R.O.C.
InventorsMENG-HSIN CHEN, HSUEH-HUI YANG, CHUN-LING CHANG
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Abstract
A method of fabricating a laser diode with a reflective layer which is applied to an epitaxial structure of the laser diode where initially the laser diode is placed in a coating device. The laser diode is then coated with additional layers of insulation, metal and a protective layer. A rapid thermal annealing process is applied to the layered laser diode. The insulation layer, metal layer and protective layer form a reflective structure on one side of the laser diode.
Claims10
A method of making a laser diode with highly reflective layer, applied to the reflection of the epitaxial structure of said laser diode, comprising steps of:
- placing a laser diode in a coating device;
- performing a coating process on said laser diode at the room temperature, and stacking sequentially on one side of said laser diode to form an insulation layer, a metal layer, and a protection layer;
- withdrawing and performing a rapid thermal annealing process (RTA) on said laser diode with said insulation layer, said metal layer, and said protection layer at a temperature;
- and
- using said insulation layer, said metal layer, and said the protection layer to form a reflective structure on one side of said laser diode.
A laser diode with highly reflective layer, comprising:
- a first electrode;
- an n-type semiconductor layer, disposed on said first electrode;
- a light-emitting layer, disposed on said n-type semiconductor layer;
- a p-type semiconductor layer, disposed on said light-emitting layer;
- and
- a second electrode, disposed on said p-type semiconductor layer;
- wherein an insulation layer is disposed on one side of said n-type semiconductor layer, said light-emitting layer, and said p-type semiconductor layer;
- a metal layer is disposed on one side of said insulation layer;
- and a protection layer is disposed on one side of said metal layer.
Dependencies are inferred from the claim text.