Back to results
US 2022/0102940 A1Published application
Trench Process for Dense VCSEL Design
AssigneeApple Inc.
InventorsMariam Sadaka, Date J. Noorlag
Life of this patent
Estimating the term…
Abstract
Trenched VCSEL emitter structures are described. In an embodiment, an emitter structure includes a cluster of non-uniformly distributed emitters in which each emitter includes an inside mesa trench and an oxidized portion of an oxide aperture layer extending from the inside mesa trench. An outside moat trench is located adjacent the inside mesa trench and is formed to a depth past the oxide aperture layer.
Claims22
An emitter structure comprising:
- an emitter cluster comprising a non-uniform distribution of emitters, each emitter comprising:
- a common bottom DBR layer shared with each emitter in the emitter cluster;
- a top DBR layer, the top DBR layer including an oxide aperture (OA) layer;
- and
- an inside mesa trench in the top DBR layer, and defining a top DBR layer mesa structure laterally interior to the inside mesa trench;
- wherein the OA layer includes a non-oxidized portion and an oxidized portion extending from a sidewall of the inside mesa trench into the top DBR layer mesa structure;
- and
- one or more outside moat trenches in the top DBR layer, each outside moat trench adjacent to the inside mesa trench for one or more emitters in the emitter cluster, wherein each outside moat trench extend to a depth past the OA layer in the top DBR layer.
5 more elements
An emitter structure comprising:
- an emitter cluster comprising plurality of emitters with a common bottom distributed Bragg reflector (DBR) layer, each emitter comprising:
- the common bottom DBR layer;
- a top DBR layer;
- an inside mesa trench in the top DBR layer, and defining a top DBR layer mesa structure laterally interior to the inside mesa trench;
- and
- an oxide aperture (OA) layer in the top DBR layer, the OA layer including a non-oxidized portion and an oxidized portion extending from opposite sidewalls of the inside mesa trench;
- wherein the top DBR layer includes alternating aluminum-containing layers and non-aluminum-containing layers, including a closest aluminum-containing layer above the OA layer and a closest aluminum-containing layer below the OA layer, wherein the closest aluminum-containing layer above the OA layer and along the opposite sidewalls of the inside mesa trench is oxidized more than the closest aluminum-containing layer below the OA layer and along the opposite sidewalls of the inside mesa trench.
4 more elements
Dependencies are inferred from the claim text.