Dual-sided socket device with corrugation structures and shield structures

A method comprising:

• coupling first conductive contacts of a first packaged device to a first interface of a socket device, the first interface comprising a first metallization structure extending vertically from a first side of a socket body structure, and respective first portions of conductors, wherein a pitch of the conductors at the first side is in a range of between 0.1 millimeters (mm) and 3 mm;
• and
• coupling second conductive contacts of a second packaged device each to a second interface of the socket device, the second interface comprising respective second portions of the conductors, and a second metallization structure which extends vertically from a second side of the socket body structure;
• wherein, for each of the first metallization structure and the second metallization structure, a vertical span of the metallization structure is in a range between 0.05 mm and 2.0 mm, a portion of a side of the metallization structure forms a respective corrugation structure, and a horizontal span of the portion is at least 5% of the vertical span of the metallization structure;
• and
• wherein a conductive shield structure of the socket device is electrically coupled to each of the first metallization structure and the second metallization structure, wherein the conductive shield structure substantially extends around one of the conductors.

A system comprising:

• a first packaged device;
• a second packaged device;
• and
• a socket device comprising:
• a socket body structure comprising a first side, and a second side opposite the first side, wherein the first packaged device and the second packaged device are coupled to the socket device via the first side and the second side, respectively;
• conductors which each extend through the socket body structure and further extend vertically from each of the first side and the second side, wherein a pitch of the conductors at the first side is in a range of between 0.1 millimeters (mm) and 3 mm;
• a first metallization structure which extends from the first side;
• a second metallization structure which extends from the second side;
• and
• a conductive shield structure, between the first side and the second side, which is electrically coupled to each of the first metallization structure and the second metallization structure, wherein the conductive shield structure substantially extends around one of the conductors;
• wherein, for each of the first metallization structure and the second metallization structure, a vertical span of the metallization structure is in a range of between 0.05 mm and 2.0 mm, a portion of a side of the metallization structure forms a respective corrugation structure, and a horizontal span of the portion is at least 5% of the vertical span of the metallization structure.