Non-galvanic interconnect for planar rf devices
AssigneeSamsung Electronics Co., Ltd.
InventorsMikhail Nikolaevich MAKURIN, Elena Aleksandrovna SHEPELEVA, Chongmin LEE
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AssigneeSamsung Electronics Co., Ltd.
InventorsMikhail Nikolaevich MAKURIN, Elena Aleksandrovna SHEPELEVA, Chongmin LEE
Estimating the term…
A radio frequency (RF) system including first and second planar RF devices coupled by non-galvanic interconnect. According to various embodiments, a first RF device and a second RF device are separated by a dielectric layer, each of the first and second RF devices including a plurality of pads disposed on surface and surrounded by a common electrode, the common electrode configured as a grounded metal shield, wherein pads of the first RF device and pads of the second RF device face each other to provide capacitive coupling between the pads. The disclosure may reduce complexity and size of the system, and offer more reliable and easily producible interconnection between elements of the RF system.
A radio frequency (RF) system comprising:
Dependencies are inferred from the claim text.