Photoelectric conversion element, photoelectric conversion device, photoelectric conversion element precursor, light detection method, and production method for photoelectric conversion element

A photoelectric conversion element precursor comprising a first layer and a second layer that are laminated,

• wherein the first layer is formed of a plurality of particles including an inorganic semiconductor as a main component, an aggregate of the particles, or a thin film including an inorganic semiconductor as a main component, the second layer is formed of a plurality of particles including a perovskite structure as a main component, an aggregate of the particles, or a thin film including a perovskite structure as a main component, and in a conduction band, an energy level of the second layer is higher than an energy level of the first layer.

A production method for a photoelectric conversion element, the production method comprising:

• a first step of forming a first laminate in which a first layer that is formed of a plurality of particles including an inorganic semiconductor as a main component, an aggregate of the particles, or a thin film including an inorganic semiconductor as a main component is laminated, on a surface of a substrate;
• a second step of forming a second laminate in which a second layer that is formed of a plurality of particles including a perovskite structure as a main component, an aggregate of the particles, or a thin film including a perovskite structure as a main component is laminated, on an exposed surface of the first layer, and
• a third step of forming a third laminate in which a third layer that is formed of a plurality of particles including an organic metal complex as a main component, an aggregate of the particles, or a thin film including an organic metal complex as a main component is laminated, on an exposed surface of the second layer, wherein energy levels of the respective layers in a conduction band are higher in order of the first layer, the second layer, and the third layer, and an energy level of the second layer is higher than an energy level of the third layer in the valence bands of the respective layers.