Photoelectric conversion element, device, and power supply module
AssigneeRicoh Company, Ltd.
InventorRyota Arai
Life of this patent
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Abstract
A photoelectric conversion element includes a substrate, a first electrode, an electron-transporting layer, a photoelectric conversion layer, a hole-transporting layer, and a second electrode. The first electrode, the electron-transporting layer, the photoelectric conversion layer, the hole-transporting layer, and the second electrode are disposed on or above the substrate. The photoelectric conversion layer includes an organic material represented by General Formula (1) below, and a N-type semiconductor material. In the General Formula (1), R1 and R2 are each independently an alkyl group having 6 or more but 22 or less carbon atoms, n is each independently an integer of from 1 through 3, X is each independently a halogen atom, and m is each independently 1 or 2.
Claims7
1:
- A photoelectric conversion element comprising:
- a substrate;
- a first electrode;
- an electron-transporting layer;
- a photoelectric conversion layer;
- a hole-transporting layer;
- and
- a second electrode, where the first electrode, the electron-transporting layer, the photoelectric conversion layer, the hole-transporting layer, and the second electrode are disposed on or above the substrate,
- wherein the photoelectric conversion layer includes an organic material represented by General Formula (1) below, and a N-type semiconductor material,
- where, in General Formula (1), R1 and R2 are each independently an alkyl group having 6 or more but 22 or less carbon atoms, n is each independently an integer of from 1 through 3, X is each independently a halogen atom, and m is each independently 1 or 2.
2:
- The photoelectric conversion element according to claim 1,
- wherein X of General Formula (1) is a bromine atom or an iodine atom.
3:
- The photoelectric conversion element according to claim 1,
- wherein the compound represented by General Formula (1) is a compound represented by General Formula (2) below,
- where, in General Formula (2), R3 is each independently an alkyl group having 2 or more but 6 or less carbon atoms, n is each independently an integer of from 1 through 3, X is each independently a bromine atom or an iodine atom, and m is each independently 1 or 2.
4:
- The photoelectric conversion element according to claim 1,
- wherein the N-type semiconductor material is a fullerene derivative.
5:
- The photoelectric conversion element according to claim 1,
- wherein an average thickness of the photoelectric conversion layer is from 50 nm through 600 nm.
6:
- A device comprising:
- the photoelectric conversion element according to claim 1,
- wherein the device is driven by electricity generated by the photoelectric conversion element.
7:
- A power supply module comprising:
- the photoelectric conversion element according to claim 1.