Semiconductor fabrication method and semiconductor device including amorphous silicon-containing liner on pillar sidewalls thereof

A method of forming a semiconductor device including:

• providing a stack on a substrate, the stack including a plurality of device layers comprising electrically conductive layers;
• patterning the stack using an etch to form trenches extending therethrough and pillars between the trenches;
• providing an amorphous silicon (a-Si) containing liner on sidewalls of the trenches;
• filling spaces between the pillars with one or more materials;
• and
• electrically coupling contact lines to the electrically conductive layers to form the semiconductor device.

A semiconductor module comprising:

• input/output (I/O) circuitry to couple the semiconductor module with an external controller;
• and
• one or more dies coupled to the I/O circuitry, each of the dies including:
• a multilayered semiconductor structure including a substrate, a plurality of device layers on the substrate defining trenches extending therethrough and pillars between the trenches, one or more materials filling the trenches, and an amorphous silicon (a-Si) containing liner on sidewalls of the pillars and disposed between the pillars and the one or more materials filling the trenches, one or more of the plurality of device layers including electrical contact lines;
• and
• electrical contact lines electrically coupled to the one or more of the plurality of device layers.