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US 2022/0102630 A1Published application
Resistive memory cell
AssigneeMicron Technology, Inc.
InventorsMatthew N. Rocklein, D.V. Nirmal Ramaswamy
Life of this patent
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Abstract
Semiconductor memory devices, resistive memory devices, memory cell structures, and methods of forming a resistive memory cell are provided. One example method of a resistive memory cell can include a number of dielectric regions formed between two electrodes, and a barrier dielectric region formed between each of the dielectric regions. The barrier dielectric region serves to reduce an oxygen diffusion rate associated with the dielectric regions.
Claims20
A resistive memory cell, comprising:
- a plurality of dielectric regions formed between a first electrode and a second electrode;
- and
- a barrier dielectric region formed between each dielectric region of the plurality of dielectric regions;
- and
- wherein the barrier dielectric region serves to reduce an oxygen diffusion rate associated with the plurality of dielectric regions.
2 more elements
A resistive memory cell, comprising:
- a first electrode;
- a first dielectric region formed on the electrode;
- a first barrier dielectric region formed on the first dielectric region, the first barrier dielectric region having a slower oxygen diffusion rate and/or being a grain-boundary disruptor relative to the first dielectric region;
- a second dielectric region formed on the first barrier dielectric region;
- and
- a second electrode formed on the second dielectric region.
3 more elements
A resistive memory cell, comprising:
- a plurality of dielectric regions formed between a first electrode and a second electrode;
- and
- a plurality of barrier dielectric regions, wherein each one of the plurality of barrier dielectric regions is formed between alternating instances of the plurality of dielectric regions;
- and
- wherein the plurality of barrier dielectric region serve as a grain-boundary disruptors with respect to the plurality of dielectric regions.
2 more elements
Dependencies are inferred from the claim text.