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US 2022/0102628 A1Published application
Variable resistance memory device and manufacturing method of the same
AssigneeSK hynix Inc.
InventorJae Hyun HAN
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Abstract
There are provided a variable resistance memory device and a manufacturing method of the same. The variable resistance memory device includes: a first electrode; a second electrode arranged in a vertical direction from the first electrode; and an oxide layer having an oxygen deficient region extending in the vertical direction between the second electrode and the first electrode.
Claims20
A variable resistance memory device comprising:
- a first electrode;
- a second electrode arranged in a vertical direction from the first electrode;
- and
- a memory cell disposed between the first electrode and the second electrode, the memory cell having a varying resistance according to a distribution density of oxygen vacancies in the memory cell,
- wherein the memory cell includes an oxide layer having a first oxygen deficient region extending in the vertical direction between the second electrode and the first electrode, and
- wherein the distribution density of oxygen vacancies in the memory cell is disposed in the first oxygen deficient region.
3 more elements
A method of manufacturing a variable resistance memory device, the method comprising:
- forming a first electrode;
- forming a first layer on the first electrode, wherein the first layer extends in a vertical direction intersecting a surface of the first electrode;
- forming a second layer on a sidewall of the first layer, wherein the second layer has an oxygen affinity different from that of the first layer and extends in the vertical direction;
- forming an oxide layer including an oxygen deficient region through an oxidation-reduction reaction occurring at an interface between the first layer and the second layer;
- and
- forming a second electrode on the oxide layer to overlap with the first oxygen deficient region in the vertical direction.
3 more elements
Dependencies are inferred from the claim text.