Light-emitting device
AssigneeXiamen San'an Optoelectronics Co., Ltd.
InventorsRenlong YANG, Ping ZHANG
Life of this patent
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Abstract
A light-emitting devise includes first and second type semiconductor layers, an active layer interposed therebetween, a current blocking layer disposed on the first type semiconductor layer and including a first strip portion, and a first electrode disposed on the current blocking layer and including a first electrode pad, a first electrode end portion distal from the first electrode pad, and a first electrode extension portion extending between the first electrode pad and the first electrode end portion. The first strip portion of the current blocking layer is located beneath the first electrode extension portion, and has a widened section having a width that gradually increases in a direction away from the first electrode pad.
Claims20
A light-emitting device, comprising:
- a first type semiconductor layer;
- a second type semiconductor layer;
- an active layer disposed between said first type semiconductor layer and said second type semiconductor layer;
- a current blocking layer that is disposed on said first type semiconductor layer to expose a portion of said first type semiconductor layer, said current blocking layer including a first strip portion;
- and
- a first electrode that is disposed on said current blocking layer and that includes a first, electrode pad, a first, electrode end portion distal from said first electrode pad, and a first electrode extension portion extending between said first electrode pad and said first electrode end portion,
- wherein said first strip portion of said current blocking layer is located beneath said first electrode extension portion and has a widened section having a width that gradually increases in a direction away from said first electrode pad.
Dependencies are inferred from the claim text.