Semiconductor light emitting element with magnetic layer, manufacturing method thereof, and display device including the same
AssigneeLG Electronics Inc.
InventorsByoungkwon CHO, Junghoon KIM
Life of this patent
Estimating the term…
Abstract
A semiconductor light emitting element can include an n-type semiconductor layer, a p-type semiconductor layer in a first region on the n-type semiconductor layer, a p-type electrode on the p-type semiconductor layer, an n-type electrode in a second region different from the first region on the n-type semiconductor layer, a magnetic layer under the n-type semiconductor layer, a reflective layer between the n-type semiconductor layer and the magnetic layer, and a passivation layer surrounding the n-type semiconductor layer, the p-type semiconductor layer, the p-type electrode, the n-type electrode, and the magnetic layer.
Claims20
A semiconductor light emitting element comprising:
- an n-type semiconductor layer;
- a p-type semiconductor layer in a first region on the n-type semiconductor layer;
- a p-type electrode on the p-type semiconductor layer;
- an n-type electrode in a second region different from the first region on the n-type semiconductor layer;
- a magnetic layer under the n-type semiconductor layer;
- a reflective layer between the n-type semiconductor layer and the magnetic layer;
- and
- a passivation layer surrounding the n-type semiconductor layer, the p-type semiconductor layer, the p-type electrode, the n-type electrode, and the magnetic layer.
A semiconductor light emitting element comprising:
- an n-type semiconductor layer;
- a p-type semiconductor layer in a first region on the n-type semiconductor layer;
- a p-type electrode formed on the p-type semiconductor layer;
- an n-type electrode formed in a second region different from the first region on the n-type semiconductor layer;
- a magnetic layer under the n-type semiconductor layer;
- and
- a reflective layer between the n-type semiconductor layer and the magnetic layer;
- wherein the reflective layer comprises a second roughness pattern.
Dependencies are inferred from the claim text.