Light detecting device and method of manufacturing same
AssigneeSamsung Electronics Co., Ltd.
InventorsChangyoung PARK, Sanghun LEE
Life of this patent
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Abstract
A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.
Claims20
A light detecting device comprising:
- a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR);
- a first semiconductor layer provided on a first surface of the light absorbing layer;
- an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer;
- and
- a second semiconductor layer provided on a second surface of the light absorbing layer,
- wherein the first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.
A light detecting system comprising:
- a light source;
- and
- at least one light detecting device configured to detect light, reflected from an object, that is emitted from the light source,
- wherein each of the at least one light detecting device comprises:
- a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR);
- a first semiconductor layer provided on a first surface of the light absorbing layer;
- an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer;
- and
- a second semiconductor layer provided on a second surface of the light absorbing layer,
- wherein the first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.
A method of manufacturing a light detecting device, the method comprising:
- sequentially forming, on a substrate, an anti-reflective layer, a first semiconductor layer, a light absorbing layer, a second semiconductor layer, and an electrode;
- attaching the electrode to a circuit substrate;
- and
- removing the substrate by etching,
- wherein the first semiconductor layer is formed to a thickness less than 500 nm, and the anti-reflective layer includes a material having an etch selectivity with respect to the first semiconductor layer.
A method of manufacturing a light detecting device, the method comprising:
- sequentially forming, on a substrate, an anti-reflective layer, a first semiconductor layer, a light absorbing layer, and a second semiconductor layer;
- bonding the second semiconductor layer to a support substrate;
- and
- removing the substrate by etching,
- wherein the first semiconductor layer is formed to a thickness less than 500 nm, and the anti-reflective layer includes a material having an etch selectivity with respect to the first semiconductor layer.
Dependencies are inferred from the claim text.