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US 2022/0102572 A1Published application
P-ohmic contact structure and photodetector using the same
AssigneeBolb Inc.
InventorsJIANPING ZHANG, LING ZHOU, YING GAO
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Abstract
A photodetector includes an UV transparent n-type structure, an UV transparent p-type structure, and a photon absorbing region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.
Claims20
A photodetector comprising:
- an n-type structure, an UV transparent p-type structure, and a photon absorbing region sandwiched between the n-type structure and the UV transparent p-type structure;
- an UV transparent p-contact layer formed on the UV transparent p-type structure;
- and
- a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.
1 more element
A photodetector comprising:
- an n-type structure, an UV transparent p-type structure, and a photon absorbing region sandwiched between the n-type structure and the UV transparent p-type structure;
- an UV transparent p-contact layer formed on the UV transparent p-type structure;
- and
- a p-ohmic contact on the UV transparent p-contact layer, wherein the p-ohmic contact is formed by sequentially depositing one or more layers of metal on the UV transparent p-contact layer and oxidizing the one or more layers of metal.
1 more element
Dependencies are inferred from the claim text.