P-i-n photodetector

A photodetector which comprises:

• a substrate with a horizontal substrate surface,
• an electrically conducting gate electrode which defines a first region on the horizontal substrate surface, and an insulating layer which covers the gate electrode in the first region on the horizontal surface,
• a measurement layer which covers the insulating layer at least in the first region on the horizontal substrate surface,
• a vertical stack of photoactive layers which comprises at least a first photoactive layer which covers the measurement layer at least in a second region on the horizontal substrate surface, wherein the second region at least partly overlaps with the first region,
• wherein the first photoactive layer comprises semiconductor nanocrystals, nanoparticles or colloidal quantum dots, the conductivity type of the measurement layer is n-type, p-type or ambipolar, and the first photoactive layer exhibits intrinsic semiconductivity.