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US 2022/0102569 A1Published application
Monolithic multijunction power converter
AssigneeArray Photonics, Inc.
InventorFerran Suarez ARIAS
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Abstract
Resonant cavity power converters for converting radiation in the wavelength range from 1 micron to 1.55 micron are disclosed. The resonant cavity power converters can be formed from one or more lattice matched GaInNAsSb junctions and can include distributed Bragg reflectors and/or mirrored surfaces for increasing the power conversion efficiency.
Claims20
A multijunction power converter, comprising:
- a thinned GaAs or Ge substrate;
- a first semiconductor layer overlying the thinned GaAs or Ge substrate, wherein the first semiconductor layer does not absorb at a monochromatic wavelength, wherein the monochromatic wavelength is within a range from 1.3 micron to 1.55 micron;
- a first GaInNAsSb junction on the first semiconductor layer, wherein the first GaInNAsSb junction has a bandgap configured to absorb at the monochromatic wavelength;
- a first tunnel junction on the first GaInNAsSb junction;
- a second GaInNAsSb junction on the first tunnel junction, wherein the second GaInNAsSb junction has the bandgap configured to absorb at the monochromatic wavelength;
- a second semiconductor layer overlying the second GaInNAsSb junction, wherein the second semiconductor layer does not absorb at the monochromatic wavelength;
- and
- a distributed bragg reflector overlying the thinned GaAs or Ge substrate, wherein the first semiconductor layer overlies the distributed bragg reflector, wherein the distributed bragg reflector comprises layers of GaAs and AlGaAs.
5 more elements
Dependencies are inferred from the claim text.