Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate comprising a source region and a drain region which are formed on a main surface of the semiconductor substrate;
• an insulating film formed on the main surface of the semiconductor substrate such that the insulating film is located between the source region and the drain region in plan view;
• a first conductive film formed on the insulating film;
• a ferroelectric film formed on the first conductive film;
• an insulating layer formed on the semiconductor substrate such that the insulating layer covers the first conductive film and the ferroelectric film;
• a first plug formed in the insulating layer such that the first plug reaches the first conductive film;
• and
• a second plug formed in the insulating layer such that the second plug reaches the ferroelectric film,
• wherein a material of the ferroelectric film contains hafnium and oxygen, and
• wherein, in plan view, a size of the ferroelectric film is smaller than a size of the insulating film.