Method of fabricating semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsYul LEE, Yuri MASUOKA
Life of this patent
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Abstract
A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming at least one active pattern on a substrate;
- forming at least one gate electrode intersecting the at least one active pattern;
- forming recesses in the at least one active pattern, the recesses being on opposite sides of the at least one gate electrode;
- conformally forming a barrier layer in at least one of the recesses, such that the barrier layer includes oxygen;
- and
- forming source/drain regions on the barrier layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming at least one active pattern on a substrate;
- forming at least one gate electrode intersecting the at least one active pattern;
- forming source/drain regions on the at least one active pattern by an epitaxial growth process, the source/drain regions being on opposite sides of the at least one gate electrode;
- and
- forming a barrier layer between each one of the source/drain regions and the at least one active pattern, the barrier layer including oxygen.
A method of manufacturing a semiconductor device, the method comprising:
- forming at least one active pattern on a substrate;
- forming at least one gate electrode intersecting the at least one active pattern;
- forming gate spacers on opposite side surfaces of the at least one gate electrode;
- forming recesses in the at least one active pattern, the recesses being on opposite sides of the at least one gate electrode, and the recesses extending below the gate spacers;
- forming a barrier layer in each of the recesses, the barrier layer including oxygen;
- and
- forming source/drain regions in the recesses, respectively,
- wherein at least one of the gate spacers overlaps and directly contacts both a topmost surface of the barrier layer and a topmost surface of at least one of the source/drain regions.
Dependencies are inferred from the claim text.