Metal oxide semiconductor device and method for manufacturing the same
AssigneeSilergy Semiconductor Technology (Hangzhou) LTD
InventorsBudong You, Chunxin Xia
Life of this patent
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Abstract
A metal-oxide-semiconductor device can include: a base layer; a source region extending from an upper surface of the base layer to internal portion of the base layer and having a first doping type; a gate structure located on the upper surface of the base layer and at least exposing the source region, and a semiconductor layer located on the upper surface of the base layer and having the first doping type, where the semiconductor layer is used as a partial withstand voltage region of the device, and the source region is located at a first side of the gate structure, the semiconductor layer is located at a second side of the gate structure, and the first side and the second side of the gate structure are opposite to each other.
Claims20
A metal-oxide-semiconductor device, comprising:
- a) a base layer;
- b) a source region extending from an upper surface of the base layer to internal portion of the base layer and having a first doping type;
- c) a gate structure located on the upper surface of the base layer and at least exposing the source region,
- d) a semiconductor layer located on the upper surface of the base layer and having the first doping type;
- and
- e) wherein the semiconductor layer is used as a partial withstand voltage region of the device, the source region is located at a first side of the gate structure, the semiconductor layer is located at a second side of the gate structure, and the first and second sides of the gate structure are opposite to each other.
A method for manufacturing a metal-oxide-semiconductor device, the method comprising:
- a) providing a base layer;
- b) forming a source region extending from an upper surface of the base layer to internal portion of the base layer and having a first doping type;
- c) forming a gate structure located on the upper surface of the base layer and at least exposing the source region;
- d) forming a semiconductor layer located on the upper surface of the base layer and having the first doping type;
- and
- e) wherein the semiconductor layer is used as a partial withstand voltage region of the device, the source region is located at a first side of the gate structure, the semiconductor layer is located at a second side of the gate structure, and the first and second sides of the gate structure are opposite to each other.
Dependencies are inferred from the claim text.