Silicon carbide device with transistor cell and clamp region
AssigneeInfineon Technologies AG
InventorsJoachim Weyers, Franz Hirler, Wolfgang Jantscher, David Kammerlander, Ralf Siemieniec
Life of this patent
Estimating the term…
Abstract
A silicon carbide device includes a transistor cell with a source region and a gate electrode. The source region is formed in a silicon carbide body and has a first conductivity type. A first low-resistive ohmic path electrically connects the source region and a doped region of a second conductivity type. The doped region and a floating well of the first conductivity type form a pn junction. A first clamp region having the second conductivity type extends into the floating well. A second low-resistive ohmic path electrically connects the first clamp region and the gate electrode.
Claims14
A silicon carbide device, comprising:
- a transistor cell comprising a source region of a first conductivity type and a gate electrode, wherein the source region is formed in a silicon carbide body;
- a doped region of a second conductivity type, wherein a first low-resistive ohmic path electrically connects the doped region and the source region;
- a floating well of the first conductivity type, wherein the floating well and the doped region form a pn junction;
- and
- a first clamp region of the second conductivity type, wherein the first clamp region extends into the floating well, and wherein a second low-resistive ohmic path electrically connects the first clamp region and the gate electrode.
Dependencies are inferred from the claim text.