Semiconductor Die and Method of Manufacturing the Same
AssigneeInfineon Technologies Austria AG
InventorsOliver Blank, Heimo Hofer, Andreas Kleinbichler, Martin Poelzl
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Abstract
A semiconductor die is described. The semiconductor die includes a semiconductor body having an active region, a metallization formed on the semiconductor body, and a passivation formed on the metallization. The metallization includes at least one of a titanium layer, a titanium nitride layer, and a tungsten layer. The passivation includes a silicon oxide layer. Corresponding methods of manufacturing and using the semiconductor die are also described.
Claims16
A semiconductor die, comprising:
- a semiconductor body comprising an active region;
- a metallization formed on the semiconductor body;
- and
- a passivation formed on the metallization,
- wherein the metallization comprises at least one of a titanium layer, a titanium nitride layer, and a tungsten layer,
- wherein the passivation comprises a silicon oxide layer.
A method for manufacturing a semiconductor die having a semiconductor body comprising an active region, a metallization formed on the semiconductor body, and a passivation formed on the metallization, the metallization comprising at least one of a titanium layer, a titanium nitride layer, and a tungsten layer, the passivation comprising a silicon oxide layer, the method comprising:
- forming the metallization on the semiconductor body by depositing at least one of the titanium material, the titanium nitride material, and the tungsten material;
- and
- forming the passivation on the metallization by depositing the silicon oxide layer.
A method of using a semiconductor die having a semiconductor body comprising an active region, a metallization formed on the semiconductor body, and a passivation formed on the metallization, the metallization comprising at least one of a titanium layer, a titanium nitride layer, and a tungsten layer, the passivation comprising a silicon oxide layer, the method comprising:
- applying an electrical potential difference of 5 V at minimum between a first and a second conductor line formed in the metallization of the semiconductor die.
Dependencies are inferred from the claim text.