Nitride semiconductor device and nitride semiconductor package
AssigneeRohm Co., Ltd.
InventorTaketoshi TANAKA
Life of this patent
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Abstract
Provided is a nitride semiconductor device 3 including a GaN electron transit layer 13, an AlGaN electron supply layer 14 in contact with the electron transit layer 13, a gate layer 15, formed selectively on the electron supply layer 14 and constituted of a nitride semiconductor composition effectively not containing an acceptor type impurity, and a gate electrode 16, formed on the gate layer 15, and satisfying the following formula (1): d g 2 E F q ( N DA + N A - N DD - N D ) ɛ 0 ɛ C + Φ B - d B P ɛ 0 ɛ C > 0 ( 1 )
Claims20
1-20. (canceled)
A nitride semiconductor device comprising a first nitride semiconductor layer, constituting the electron traveling layer;
- a second nitride semiconductor layer, formed on the first nitride semiconductor layer and constituting the electron supply layer;
- a gate portion, disposed on the second nitride semiconductor layer;
- a passivation film, formed to cover the gate portion;
- a barrier metal film, formed to cover the passivation film;
- and
- a source electrode and a drain electrode, connected to the second nitride semiconductor layer and disposed on the barrier metal film,
- wherein a connection portion of the source electrode to the second nitride semiconductor layer and a connection portion of the drain electrode to the second nitride semiconductor layer are disposed to sandwich the gate portion in a plan view.
Dependencies are inferred from the claim text.