Integrated Assemblies and Methods of Forming Integrated Assemblies
AssigneeMicron Technology, Inc.
InventorsDavid K. Hwang, John F. Kaeding, Richard J. Hill, Scott E. Sills
Life of this patent
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Abstract
Some embodiments include an integrated assembly having a conductive structure, an annular structure extending through the conductive structure, and an active-material-structure lining an interior periphery of the annular structure. The annular structure includes dielectric material. The active-material-structure includes two-dimensional-material. Some embodiments include methods of forming integrated assemblies.
Claims30
An integrated assembly, comprising:
- a conductive line;
- a conductive structure over the conductive line;
- an annular structure extending through the conductive structure, the annular structure comprising dielectric material;
- and
- an active-material-structure lining an interior periphery of the annular structure, the active-material-structure comprising two-dimensional-material, the active-material-structure having an annular portion having an upper region, a lower region and an intermediate region between the upper region and the lower region, the active-material-structure having a base portion entirely closing a bottom of the lower region of the annular structure, an entirety of a bottom surface of the base being in direct physical contact with the conductive line.
An integrated assembly, comprising:
- a conductive structure;
- an annular structure extending through the conductive structure, the annular structure comprising dielectric material;
- an active-material-structure lining an interior periphery of the annular structure, the active-material-structure comprising two-dimensional-material;
- the annular structure and the active-material-structure have upper surfaces above an upper surface of the conductive structure;
- a conductive material over the upper surfaces of the annular structure and the active-material-structure and capping an interior region of the active-material-structure;
- and
- a void within said interior region.
An integrated assembly, comprising:
- a conductive structure;
- an annular structure extending through the conductive structure, the annular structure comprising dielectric material;
- an active-material-structure lining an interior periphery of the annular structure, the active-material-structure comprising two-dimensional-material;
- the annular structure and the active-material-structure have upper surfaces above an upper surface of the conductive structure;
- a conductive material over the upper surfaces of the annular structure and the active-material-structure and capping an interior region of the active-material-structure;
- and
- insulative material within said interior region.
20-22. (canceled)
An integrated assembly, comprising:
- first conductive structures extending along a first direction;
- first insulative material over the first conductive structures;
- second conductive structures over the first insulative material and extending along a second direction which crosses the first direction;
- insulative rings extending through the second conductive structures;
- active-material-structures lining interior peripheries of the insulative rings, the active-material-structures comprising two-dimensional-material;
- the active-material-structures having lower source/drain regions beneath the second conductive structures, upper source/drain regions above the second conductive structures, and channel regions between the upper and lower source/drain regions;
- the lower source/drain regions being electrically coupled with the first conductive structures;
- and
- storage elements electrically coupled with the upper source/drain regions.
31-38. (canceled)
Dependencies are inferred from the claim text.