Semiconductor device structure with metal gate stacks
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Hsuan HSIAO, Shu-Yuan KU, Chih-Chang HUNG, I-Wei YANG, Chih-Ming SUN
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first metal gate stack and a second metal gate stack over the semiconductor substrate. The first metal gate stack and the second metal gate stack are electrically isolated from each other, and the first metal gate stack has a curved edge facing the second metal gate stack. The semiconductor device structure also includes a dielectric layer surrounding the first metal gate stack and the second metal gate stack.
Claims20
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a first metal gate stack and a second metal gate stack over the semiconductor substrate, wherein the first metal gate stack and the second metal gate stack are electrically isolated from each other, and the first metal gate stack has a curved edge facing the second metal gate stack;
- and
- a dielectric layer surrounding the first metal gate stack and the second metal gate stack.
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a first metal gate stack and a second metal gate stack over the semiconductor substrate;
- a dielectric layer surrounding the first metal gate stack and the second metal gate stack;
- and
- an insulating structure over the semiconductor substrate, wherein the insulating structure has a first portion and a second portion, the first portion is sandwiched between the first metal gate stack and the second metal gate stack, the second portion links the first portion and is not sandwiched between the first metal gate stack and the second metal gate stack, and the first portion of the insulating structure is closer to the semiconductor substrate than the second portion of the insulating structure.
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a first metal gate stack and a second metal gate stack over the semiconductor substrate;
- a dielectric layer surrounding the first metal gate stack and the second metal gate stack;
- and
- an insulating structure over the semiconductor substrate, wherein the insulating structure has a first portion and a second portion, the first portion is sandwiched between the first metal gate stack and the second metal gate stack, the second portion links the first portion and penetrates into the dielectric layer, and the first portion of the insulating structure is thicker than the second portion of the insulating structure.
Dependencies are inferred from the claim text.