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US 2022/0102530 A1Published application
Preparation method for semiconductor structure
AssigneeEnkris Semiconductor, Inc.
InventorKai CHENG
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Abstract
According to the preparation method for a semiconductor structure provided in the present application, a selective epitaxial growth method is used, without etching the n-type semiconductor layer and the p-type semiconductor layer, thus avoiding problems such as uncontrollable etching depth and damaged etched surface, which effectively reduces gate leakage, maintains low resistance in a channel region, suppresses current collapse, and improves reliability and stability of a device.
Claims15
A preparation method for a semiconductor structure, comprising:
- sequentially preparing a channel layer, a barrier layer, and a p-type semiconductor layer on a substrate;
- preparing a dielectric layer in a gate region above the p-type semiconductor layer;
- preparing an n-type semiconductor layer in a region other than the gate region above the p-type semiconductor layer;
- and
- activating a p-type impurity in the p-type semiconductor layer covered by the dielectric layer, to form an active region.
2 more elements
Dependencies are inferred from the claim text.