Semiconductor structure and manufacturing method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorChuyu WANG
Life of this patent
Estimating the term…
Abstract
A semiconductor structure and a manufacturing method thereof are provided, which relates to the field of the semiconductor. The method of manufacturing the semiconductor structure includes: providing a substrate; forming a gate trench on the substrate; forming a barrier layer at least covering the inner wall of the gate trench in the gate trench; removing chloride ions remaining in the barrier layer by a plasma ion implantation, and forming a first barrier layer and a second barrier layer by the barrier layer, the concentration of nitrogen ions in the first barrier layer is different from the concentration of nitrogen ions in the second barrier layer; and forming a gate structure in the gate trench.
Claims20
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- forming at least one gate trench in the substrate;
- forming, in the gate trench, a barrier layer at least covering an inner wall of the gate trench;
- removing chloride ions remaining in the barrier layer by a plasma ion implantation, and forming a first barrier layer and a second barrier layer by the barrier layer, wherein a concentration of nitrogen ions in the first barrier layer is different from a concentration of nitrogen ions in the second barrier layer;
- and
- forming a gate structure in the gate trench.
A semiconductor structure, comprising:
- a substrate;
- at least one gate trench arranged in the substrate;
- a barrier layer covering an inner wall of the gate trench, wherein no chloride ions remain in the barrier layer, and wherein the barrier layer comprises a first barrier layer and a second barrier layer, and a concentration of nitrogen ions in the first barrier layer is different from a concentration of nitrogen ions in the second barrier layer;
- and
- a conductive layer covering a surface of the barrier layer, wherein the barrier layer and the conductive layer form a gate structure.
Dependencies are inferred from the claim text.