Method for fabricating semiconductor device with buried gate
AssigneeSK hynix Inc.
InventorJin Woong Kim
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes: providing a substrate having a front surface and a rear surface opposite to the front surface; forming a trench in the front surface of the substrate; forming a gate dielectric layer over the trench; forming a gate electrode that fills a bottom portion of the trench over the gate dielectric layer; forming a sealing layer that includes a first portion covering the gate electrode, the gate dielectric layer, and the front surface of the substrate, and a second portion covering the rear surface of the substrate; selectively removing the second portion of the sealing layer; and performing an annealing process to form a hydrogen treated surface on an interface between the trench and the gate dielectric layer.
Claims22
A method for fabricating a semiconductor device, comprising:
- providing a substrate having a front surface and a rear surface opposite to the front surface;
- forming a trench in the front surface of the substrate;
- forming a gate dielectric layer over the trench;
- forming a gate electrode that fills a bottom portion of the trench over the gate dielectric layer;
- forming a sealing layer that includes a first portion covering the gate electrode, the gate dielectric layer, and the front surface of the substrate, and a second portion covering the rear surface of the substrate;
- selectively removing the second portion of the sealing layer;
- and
- performing an annealing process to form a hydrogen treated surface on an interface between the trench and the gate dielectric layer.
A method for fabricating a semiconductor device, comprising:
- providing a substrate having a front surface and a rear surface opposite to the front surface, the front surface including an etched surface;
- forming a sealing layer that includes a first portion covering the front surface of the substrate including the etched surface, and a second portion covering a rear surface of the substrate;
- removing the second portion of the sealing layer;
- and
- performing an annealing process on the rear surface of the substrate to transform the etched surface of the substrate into a hydrogen treated surface.
A semiconductor device, comprising:
- a substrate having a front surface and a rear surface opposite to the front surface;
- a trench formed in the front surface of the substrate;
- a gate dielectric layer formed over the trench;
- a hydrogen treated surface formed on an interface between the trench and the gate dielectric layer;
- a gate electrode formed over the gate dielectric layer to fill a bottom portion of the trench;
- a sealing layer formed over the gate electrode to fill a remaining portion of the trench;
- and
- a capping layer that covers the rear surface of the substrate.
Dependencies are inferred from the claim text.