Semiconductor memory device

A semiconductor memory device comprising:

• a stack structure including interlayer insulating layers alternately stacked with conductive patterns;
• a channel layer penetrating the stack structure;
• a tunnel insulating layer disposed between the channel layer and each of the conductive patterns;
• a data storage layer disposed between the tunnel insulating layer and each of the conductive patterns, the data storage layer including a silicon nitride layer;
• a blocking insulating layer disposed between the data storage layer and each of the conductive patterns;
• and
• a carbon containing layer disposed between the data storage layer and the blocking insulating layer.

A semiconductor memory device comprising:

• a tunnel insulating layer disposed between a conductive pattern and a channel layer;
• a data storage layer disposed between the conductive pattern and the tunnel insulating layer, the data storage layer including a silicon nitride layer;
• a first blocking insulating layer disposed between the conductive pattern and the data storage layer;
• a second blocking insulating layer disposed between the conductive pattern and the first blocking insulating layer;
• and
• a carbon containing layer disposed at at least one position among a position between the tunnel insulating layer and the data storage layer, a position between the first blocking insulating layer and the data storage layer, a position in the tunnel insulating layer, and a position between the first blocking insulating layer and the second blocking insulating layer,
• wherein the data storage layer further includes at least one silicon carbon nitride (SiCN) layer formed in the data storage layer, and the at least one SiCN layer isolates the silicon nitride layer into charge trap layers.