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US 2022/0102504 A1Published application
A pnictide nanocomposite structure for lattice stabilization
AssigneeIQE plc
InventorsAndrew CLARK, Rodney PELZEL, Mukul DEBNATH, Rytis DARGIS, Robert YANKA
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Abstract
A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.
Claims22
A layered structure comprising:
- a substrate;
- a distortion layer having a first lattice constant and being epitaxially grown over the substrate, wherein the distortion layer comprises a plurality of nanocomposites that modify the first lattice constant of the distortion layer;
- and
- a stabilization layer having a second lattice constant and being epitaxially grown over the distortion layer, wherein a second lattice constant of the stabilization layer is lattice matched to the first lattice constant modified by the plurality of nanocomposites of the distortion layer.
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A layered structure comprising:
- a substrate;
- a first semiconductor layer epitaxially grown over the substrate;
- a dislocation filter epitaxially grown over the first semiconductor layer;
- and
- a second semiconductor layer epitaxially grown over the dislocation filter,
- wherein the dislocation filter comprises a plurality of nanocomposites.
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Dependencies are inferred from the claim text.