SiC SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR

An SiC semiconductor device comprising:

• an SiC chip having a first main surface and a second main surface respectively formed in quadrilateral shapes in plan view and four side surfaces respectively connecting the first main surface and the second main surface and respectively constituted of cleavage surfaces;
• a modified region formed in the respective side surfaces and modified to be of a property differing from an SiC monocrystal;
• an alignment pattern as an accessory pattern formed in a peripheral edge portion of the first main surface at intervals inward from the respective side surfaces in plan view;
• a main surface electrode formed on the first main surface at intervals inward from the respective side surfaces and exposing the alignment pattern in plan view;
• and
• an insulating layer formed on the first main surface at intervals inward from the respective side surfaces, partially covering the main surface electrode, and demarcating a dicing street that exposes the alignment pattern with the side surfaces in plan view;
• and
• wherein an accessory pattern other than the alignment pattern is not formed in the peripheral edge portion of the first main surface positioned within the dicing street in plan view.