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US 2022/0102497 A1Published application
Semiconductor device including source/drain region
AssigneeSamsung Electronics Co., Ltd.
InventorsSung Uk JANG, Seung Hun LEE, Su Jin JUNG, Young Dae CHO
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Abstract
A semiconductor device including an active region defined in a substrate; at least one channel layer on the active region; a gate electrode intersecting the active region and on the active region and surrounding the at least one channel layer; and a pair of source/drain regions adjacent to both sides of the gate electrode, on the active region, and in contact with the at least one channel layer, wherein the pair of source/drain regions includes a selective epitaxial growth (SEG) layer, and a maximum width of each of the pair of source/drain regions in a first direction is 1.3 times or less a width of the active region in the first direction.
Claims20
A semiconductor device, comprising:
- first and second active regions defined in a substrate while being spaced apart from each other;
- at least one first channel layer disposed on the first active region;
- at least one second channel layer disposed on the second active region;
- a gate electrode intersecting the first and second active regions and surrounding the at least one first channel layer and the at least one second channel layer;
- a first drain region disposed on the first active region while being in contact with the at least one first channel layer;
- a second drain region disposed on the second active region while being in contact with the at least one second channel layer;
- a first contact plug on the first drain region;
- and
- a second contact plug on the second drain region,
- wherein each of the first and second drains regions comprises a selective epitaxial growth (SEG) layer,
- wherein a maximum width of each of the first and second drain regions is 1 to 1.3 times a width of a corresponding one of the first and second active regions, and
- wherein the second drain region is spaced apart from the first drain region.
9 more elements
A semiconductor device, comprising:
- first and second active regions defined in a substrate while being spaced apart from each other;
- at least one first channel layer disposed on the first active region;
- at least one second channel layer disposed on the second active region;
- a gate electrode intersecting the first and second active regions and surrounding the at least one first channel layer and the at least one second channel layer;
- a first drain region disposed on the first active region while being in contact with the at least one first channel layer;
- a second drain region disposed on the second active region while being in contact with the at least one second channel layer;
- and
- a contact plug on the first drain region and the second drain region,
- wherein each of the first and second drains regions comprises a selective epitaxial growth (SEG) layer,
- wherein a maximum width of each of the first and second drain regions is 1 to 1.3 times a width of a corresponding one of the first and second active regions, and
- wherein the second drain region is spaced apart from the first drain region.
8 more elements
A semiconductor device, comprising:
- first and second active regions defined in a substrate while being spaced apart from each other;
- at least one first channel layer disposed on the first active region;
- at least one second channel layer disposed on the second active region;
- a gate electrode intersecting the first and second active regions and surrounding the at least one first channel layer and the at least one second channel layer;
- a first drain region disposed on the first active region while being in contact with the at least one first channel layer;
- a first source region disposed on the first active region while facing the first drain region and being in contact with the at least one first channel layer;
- a second drain region disposed on the second active region while being in contact with the at least one second channel layer;
- a second source region disposed on the second active region while facing the second drain region and being in contact with the at least one second channel layer;
- a first contact plug on the first drain region;
- a second contact plug on the second drain region;
- and
- a third contact plug on the first and second source regions,
- wherein each of the first and second drains regions and the first and second source regions comprises a selective epitaxial growth (SEG) layer,
- wherein a maximum width of each of the first and second drain regions and the first and second source regions is 1 to 1.3 times a width of a corresponding one of the first and second active regions,
- wherein the second drain region is spaced apart from the first drain region, and
- wherein the second source region is spaced apart from the first source region.
13 more elements
Dependencies are inferred from the claim text.